Impact of the Zn diffusion process at the source side of InxGa1−xAs nTFETs on the analog parameters down to 10 K

In this work, the impact of the Zn diffusion processes in the source and the amount of Indium for In
x
Ga
1−x
As nTFET was analyzed, focusing on the basic analog parameters. Three different splits were analyzed: In
0.53
Ga
0.47
As with Spin-on-Glass (SoG) Zn diffusion in the source, In
0.7
Ga
0.3
As using SoG and In
0.53
Ga
0.47
As with Gas Phase Zn diffusion in the source. The Ion increase of the Gas Phase device can be related to its higher source/channel junction abruptness that also reduces the tunneling length. The Gas Phase device has presented better subthreshold swing, which increases the transistor efficiency in the weak conduction regime. The Gas Phase device presents the lowest intrinsic voltage gain (A
V
)for high gate voltage (V
GS
) values due to its significant output conductance (g
D
) degradation However, the reduction of the temperature affects more g
D
than gm, resulting in an improvement of A
V
by more than 20 dB at 10 K for the Gas Phase device compared to both SoG splits.