Integration of Si-CMOS and III-V materials through multi-wafer stacking

A method to integrate III-V compound semiconductors (e.g., GaN HEMT, InGaN LED, InGaAs HEMT or AlGaInP LED) and Si-CMOS on a common Si substrate is demonstrated. The Si-CMOS layer from SOI wafer is temporarily held on a Si handle wafer. Another III-V/Si substrate is then bonded to the Si-CMOS containing handle wafer. Finally, the handle wafer is released to realize the Si-CMOS on III-V/Si substrate. Additional III-V/Si substrates with different materials and structures can be integrated on the same piece of Si-CMOS+III-V/Si substrate by stacking another III-V/Si substrate before the handle wafer is removed. Through this method, integration of Si-CMOS with more than one type of III-V materials on a single Si platform can be realized (e.g., CMOS/InGaAs HEMT/GaN LED on a silicon substrate). Hence, a new generation of system with diversed functionalities, better energy efficiency, and smaller form factor can be achieved.