Design and Analysis of Schmitt Trigger Based 10T SRAM in 32 nm Technology

Low stability and higher process parameter variations are the critical issues in SRAM cell in nanometer technology. In this paper, we propose a Schmitt trigger based differential SRAM bit cell to solve scaled technology issue. Schmitt triggers based SRAM cell provides higher read stability and higher process variation tolerance because of its internal positive feedback. This paper proposes a cell with which utilize read-write decouple technique and Schmitt trigger technique to enhance cell acceptability at low technology. To estimate the effect of process parameter variation on stability Monte Carlo simulation are performed using 32 nm predictive-technology-model (PTM) with 30% threshold voltage variations. Proposed cell achieves 1.56 higher read static noise margin compared to the traditional ST-1 and ST-2 cell respectively. In this cell, Sensitivity to process parameter variation is reduced by 5.9× and 2.5× as compared to ST-1 and ST-2 cell. The results indicate that the proposed cell may be a better substitution of other Schmitt trigger based SRAM cell at scaled technology node.