High on-current and low threshold GaSb-InAs heterostructure dual-material DG tunnel-FET

In this paper, a novel high-performance GaSb-InAs heterostructure dual-material double-gate (DM-DG) TFET exhibiting high on-current with low threshold voltage is presented. The on-current is boosted from conventional homostructure DM-DG TFET due to the energy band discontinuity at the source-channel junction. Moreover, the impact of thickness dependent bandgap and electron affinity of GaSb-InAs heterostructure on the threshold voltage, on-current, and on-off ratio is also investigated. Our proposed device provides 191.42 μA/μm on-current (Ion), 48 mV/decade SS, and 0.3 V threshold voltage (Vth) at Vds = 0.5 V for 5 nm channel thickness with 40 nm channel length. The optimization of gate material work-function for the proposed heterostructure in comparison with InAs homostructure DM-DG TFET is also analyzed in our work.