Energy efficient memory technologies

This article aims to discuss several emerging memory technologies from an energy efficiency point of view. Three relatively new non-volatile memory technologies will be reviewed: Phase Change Memory, Resistive Switching Devices and Spin Torque Transfer Random Access Memory (STT-RAM). We will focus on their reading/writing power efficiency, area efficiency or scalability, information retaining efficiency and endurance, as well as their opportunities and limitations. Circuit and system level considerations aiming to reserve power and extend device lifetime will also be discussed.