An electrothermal large signal model of GaN HEMTs foundry process

An Eletrothermal large signal model for 0.25 μm GaN HEMTs foundry process is presented. This model based on the Angelov GaN model is capable of predicting the DC I-V, Pulsed I-V, S parameters and large signal characteristics. Improved thermal effect description has been used in the electrothermal model. The Hiwafer GaN HEMTs devices are used to demonstrate the accuracy of this large signal model by comparison between the simulation results and the measurement data.