A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET: Experimental verification and circuit demonstration

For the first time, a unified surface potential based physical compact model for both unipolar and ambipolar two-dimensional material field effect transistors (2D-FETs) is developed and verified by experimental data. This model is based on the theories of effective transport energy, generalized Einstein relation and multiple defect-induced trapping dynamics. The temperature and carrier density dependent transport (e.g. variable range hopping and nearest neighbour hopping) and metal insulator transition behavior (e.g. hopping to bandlike) are physically incorporated. The predicted transfer and output characteristics of black phosphorous-, WS
₂
-and MoS
₂
-FETs have excellent quantitative agreement with experimental results. Furthermore, the benchmark of temperature dependent characteristics also confirms the validity of this proposed model. These demonstrate its capability for obtaining deeper understanding on device physics, performance and further optimization. Finally, the compact model is implemented in Verilog-A to evaluate the possibility of using 2D-FETs for digital and RF applications.