Overcoming the reliability limitation in the ultimately scaled DRAM using silicon migration technique by hydrogen annealing

We demonstrated a highly reliable buried-gate saddle-fin cell-transistor (cell-TR) using silicon migration technique of hydrogen (H
₂
) annealing after a dry etch to form the saddle-fin in a fully integrated 2y-nm 4Gb DRAM. It clearly shows a reduction in interface trap density with highly enhanced variable-retention-time (VRT) and Row-Hammering immunity.