Improvement of HfO2 based RRAM array performances by local Si implantation

A thorough insight of Si implantation in HfÜ2-based OXRAM is presented, from a material standpoint up to a 4 kbit 1T-1R array. We demonstrate for the first time that local implantation enables switching area localization and significantly decreases forming, set and reset voltages, improves data retention (tails at 3o are stable up to 1000 min at 165°C), while not being detrimental for endurance. In particular using low voltage programming conditions (VF <; 3V with 100 ns pulses), a memory window of 10 at 3σ is demonstrated, paving the way to low power OxRAM arrays with lower variability and improved robustness.