Multiphysics simulation of InP NWT for high speed digital applications

Digital circuits are now ubiquitous. Along with its pervasiveness, demand for higher speed and efficiency is also on the rise. This points to search for better materials for use in transistors. InP nanowire transistor has been studied to ascertain whether it is a reasonably good candidate for use in digital applications as the building block. This has been done by performing various studies on the device. The transfer characteristics of the device have been studied at different gate and drain voltages. A I
_ON
/I
_OFF
ratio of 2.5 × 10
³
and a SS of 140mV/decade have been obtained.