Low-power and high-frequency ring oscillator design in 65nm CMOS technology

Symmetrical load ring oscillator design and analysis is presented for Bluetooth front-end applications. High frequency waveform in the range of 4.9 GHz ∼ 5 GHz with low power consumption of 2mW is generated by this oscillator. A wide frequency tuning range of 3.7 ∼ 6.5 GHz and high value of Kvco are provided with 1 V power supply. The biasing network is realized to control the embedded current source to improve the high-frequency behavior of ring VCO and full range output buffer. The proposed ring oscillator is designed in TSMC 65 nm RF CMOS technology.