Enhancement-mode GaN HEMT power electronic device with low specific on resistance

An enhancement-mode GaN HEMT on silicon substrate was obtained by using p-type GaN Cap. P-type GaN cap was obtained by Mg doping. The activation concentration of the p-GaN cap was 3e17cm
^-3
with a thickness of 60nm. Selective dry etching was used to fabricate the device. Back metal and substrate thinning was used for improving the cooling capacity. A threshold voltage (V
_h
) of 1.2V was obtained with a maximum forward gate voltage of 7V. An output current (I
_D
) of 12A was obtained at V
_D
and V
_G
were 1V and 6V, respectively. The breakdown voltage of this device was larger than 350V, and the specific on resistance was 0.45 mΩ·cm
²
.