ASAP7 predictive design kit development and cell design technology co-optimization: Invited paper

This work discusses the ASAP7 predictive process design kit (PDK) and associated standard cell library. The necessity for multi-patterning (MP) techniques at advanced nodes results in the standard cell and SRAM architecture becoming entangled with design rules, mandating design-technology co-optimization (DTCO). This paper discusses the DTCO process involving standard cell physical design. An assumption of extreme ultraviolet (EUV) lithography availability in the PDK allows bi-directional M1 geometries that are difficult with MP. Routing and power distribution schemes for self-aligned quadruple patterning (SAQP) friendly, high density standard cell based blocks are shown. Restrictive design rules are required and supported by the automated place and route (APR) setup. Supporting sub-20 nm dimensions with academic tool licenses is described. The APR (QRC techfile) extraction shows high correlation with the Calibre extraction deck. Finally, use of the PDK for academic coursework and research is discussed.