Resistance of irradiated by H+ ions Si in the temperature range 77–300 K

By the use of PBW (Proton Beam Writing) technology Si monocrystal was irradiated. The energy of ions H
⁺
was 1.5 MeV. The integrated dose was 2·10
¹⁵
p/cm
²
. The temperature dependence of the sample resistance after irradiation is significantly different from the typical dependence. In the temperature interval 100-150 K the sample resistance is almost unchanged. Resistance of the unirradiated specimen at temperatures below 150 K is less than the irradiated one. In the middle of the sample a layer was formed the temperature dependence of the resistance of which increases with increasing of temperature.