Highly-sensitive plasmonic nano-ring transistor for monolithic terahertz active antenna

We report a highly-sensitive plasmonic nano-ring transistor for monolithic terahertz (THz) active antenna. By designing an ultimate asymmetric transistor on a metal-gate structure, more enhanced (180 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular active antenna, which is designed for a 0.12-THz resonance frequency, we experimentally demonstrated the highly-enhanced responsivity (R
_V
) > 1 kV/W (× 5) and reduced noise-equivalent power (NEP) <; 10 pW/Hz
^0.5
(× 1/10).