High speed dV/dt control technology for SiC power module for EV/HEV inverters

This paper presents dV/dt control technology that enables lower switching loss and surge, especially higher speed switching of silicon carbide (SiC) devices. This technology is a surge reduction method using a high-speed passive gate driver that independently controls turn-on and turn-off events. Experimental results for a prototype gate driver confirmed that switching loss can be reduced by half.