Contents I. Introduction
Electrical level simulation of digital circuits is essentially based on compact models of MOSFETs [1], [2]. Models of circuit elements should be sufficiently simple and accurate to be incorporated in circuit simulators. These models are needed to numerically compute the device characteristics accurate and fast enough to simulate electrical circuits. The contradictory objectives of model simplicity and accuracy make the compact modeling the challenging research area jointly in device physics, electronic engineering and applied mathematics [3]. A condition of fast simulation implies an analytic form of the compact models. Radiation hardness and operation in harsh environments impose the additional requirements for accuracy of MOSFET compact models. As noted in [4]: “Understanding and analyzing the impact of ionizing radiation and aging effects in modern MOS technologies requires the incorporation of radiation and stress-induced defects into advanced compact model formulations of device operation.” In particular, it would be desirable the model would provide an opportunity to accurately describe the MOSFET I-V characteristics at different doses of ionizing irradiation in a wide temperature range.
