Self-optimizing passively, actively and hybridly mode-locked diode lasers

Summary form only given. Due to their large gain bandwidth, semiconductor lasers are an interesting alternative to conventional ultrafast laser systems. Their potential pulse width is predicted to be well below 60 fs [1]. In comparison to other sources, they are directly electrically pumped, are compact in size and their emission range can be designed by bandgap engineering. Yet semiconductor lasers for ultrashort pulse generation still face challenges.Nonetheless, for passive mode-locking the low saturable absorption bandwidth remains a challenge. We therefore expand the method of resonator internal pulse shaping to hybrid and active mode-locking to reduce the limitations induces by the saturable absorber.