A compact X-band four-channel SiGe BiCMOS T/R chipset for digital array radar applications

This paper presents a four-channel transmit/receive (T/R) chipset using 0.18um SiGe technology for X-band phased array applications. Each channel consists of sub-blocks such as low noise amplifier, power amplifier, phase shifter, single-pole double-throw switch and variable gain amplifier. Between 8 and 10GHz, the constructed T/R chipset achieves around 15dB gain for transmit (Tx) chain and 11dB gain for receive(Rx) chain. The output P1dB in Tx mode is >13dBm at 8–10GHz. The RMS attenuation error is better than 3dB and the RMS phase error is better than 6 degree. The chip size is 6 × 8mm
²
including pads which corresponded to 12mm
²
per channel. The total power dissipation of the chipset is 25mW in Rx mode and 150mW in Tx mode.