High-power K-band GaN PA MMICs and module for NPR and PAE

Two K-Band GaN MMICs and an SSPA module that display high-power and linearity are presented. The two MMICs utilize a 0.2pm gate GaN HEMT technology and are designed for 17.2 to 20.2 GHz at a 20V bias. The first design, APN269, shows over 10W of output power at 38% PAE at P
_sat
and 15dB NPR at P2dB. The second design, APN272, shows 8.5W of output power at 46% PAE at P
_sat
and over 18dB NPR. Finally, the module displays 30W and over 22% PAE at P
_sat
with 15dB NPR at P2dB. These results showcase optimizing for power and PAE while maintaining high-linearity.