Reliability analysis of IGBT based on fuzzy theory

Life prediction of insulated gate transistor is often based on the damage of unilateral factors such as solder layer or bonding wire, and there is little mention of the relationship between the damage and the increase of thermal resistance. In this paper, firstly the damage of the modules in different working conditions is quantified and compared based on the fuzzy theory, and the relationship between the damage of the solder layer and the change of thermal resistance is obtained. Secondly, according to the change of thermal resistance and the lifetime of the module, the life prediction of IGBT under different working conditions is made.