A double-π equivalent circuit model for GaN on-chip inductors

A double-π equivalent circuit model well-fitted for on-chip inductors with GaN process is presented in this paper. The equivalent circuit is made up of two cells and can feature the frequency-dependent characteristics well in a wide range of frequency up to 20GHz. The parameter extraction is conducted based on the improved characteristic function method according to four parts. The validation includes five different indexes and the model simulation fits the measured data very well.