Research of RF LDMOS device with partial stepped oxygen layer

In this paper, we propose a radio frequency lateral double diffused metal oxide semiconductor device with part of stepped buried oxide layer, and establish a model of the surface electric field of the device. From the simulation results, it is concluded that the surface electric field distribution model is basically consistent with the simulation results, and the new peak electric field is obtained essentially explains the modulation of step buried oxide layer on the surface of the electric field. Compared with the same size of an ordinary PSOI RF LDMOS device, the device's breakdown voltage increased from 100.1V to 123.2V, increased by 23.08%, the on-resistance is reduced from 1.87 mΩ·cm2 to 1.36mΩ·cm2, which is reduced by 37.5%; Because of the stepped buried oxide layer reduces the parasitic capacitance, so the cutoff frequency of the device is increased by 18.09%. A solution for better application of RF LDMOS devices to RF circuits is provide.