Edge termination design of a 700-V triple RESURF LDMOS with n-type top layer

This paper presents three-dimensional (3-D) edge termination design of a 700-V triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) with n-type top (n-top) layer. It is found that breakdown characteristics deterioration related to the electric field crowding and the local charge imbalance in the edge termination. The two crucial parameters L
_P
and L
₂
in the layout of the transition region of the edge termination were studied by 3-D numerical simulations and experiments to overcome these issues. As implantation dose of n-top layer (D
_ntop
) increases from 0.8 × cm
^-2
to 1.2 × cm
^-2
, progressive performance with Fß from 805 V to 711 V and R
_{on, sp}
from 86.49 mΩ· cm
²
to 80.56 mΩ·cm
²
is experimental obtained and the novel LDMOS demonstrates maximum figure of merit (FOM) in the latest existing 700-V LDMOS technologies.