Study and design of graphene field effect transistor for RF performance

This paper presents the study of RF characteristics of Graphene based Field Effect Transistor (GFET). The study of characteristic curves is carried out using SILVAVO TCAD tools. The RF parameters which determines the performance of the device in the higher frequency and the effect of downscaling of the device channel length is analyzed and parameters are extracted. This work also presents the effective and novel way to model the material graphene in simulator and GFET device simulation using TCAD.