Low temperature ohmic contact for p-type GaN using Mg electrodes

A low temperature Ohmic contact for highly doped pGaN has been demonstrated with Mg electrodes. A
Φ
_Bp
of 0.47 eV with
ρ
_c
of 3.4×10
^-2
Ωcm
²
has been extracted by electrical measurements with the TFE model. Considering the WF of the electrodes, the presence of a large potential shift near the interface to reduce the
Φ
_Bp
can be suggested. The results give lots of insights on the Ohmic contact for pGaN.