Formation of Mo2C electrodes using stacked sputtering process for thermally stable SiC Schottky barrier diodes

The introduction of SiC Schottky barrier diodes has enabled further power loss reduction in high voltage power electronics, owing to its high operation speed [1]. Various electrode materials for diodes have been reported so far, including Mo, Ti and Ni [2]. However, interface reactions between these metals and SiC surfaces results in the formation of an inhomogeneous interface, which rises concerns to long-term reliability issues. Mo
₂
C electrodes, on the other hand, have revealed stable diode characteristics against an annealing up to 1050 °C, suggesting practically reliable operations in power electronics [3]. Although nice electrical characteristics were obtained, the physical analyses of the interface are still yet to be done. In this presentation, detailed analyses of the formation of a Mo
₂
C layer on SiC surfaces using stacked sputtering process are reported [4].