On quantum effects and low frequency noise spectroscopy in Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures

In this work, DC and low frequency noise have been investigated in Gate-All-Around Nanowire MOSFETs at very low temperatures. Static characteristics at 4.2 K exhibit step-like effects that can be associated to energy subbands scattering. The mobility and subthreshold swing are also investigated. Finally the low frequency noise spectroscopy (from 10 K to 70 K) leads to the identification of silicon film traps.