Characterization and modelling of Ag/TiO2/ITO devices exhibiting bipolar memristive properties

Fabricated Ag/TiO
₂
/ITO devices, that show memristive properties, have been measured and their electrical variables were characterized. A piecewise nonlinear methodology is used to recast the model of the device in a range-dependent polynomial. The resulting model is coded in a high-level hardware description language with the aim of incorporating the device into a simulation framework.