I. Introduction
In recent years, attacks that exploit the Rowhammer effect have gained a lot of attention, as they can enable a plethora of security-related risks due to the wide-spread vulnerability imposed by the Rowhammer effect in today's DRAM modules. The phenomenon was first described by Kim et al. [1], who were able to induce so-called disturbance errors in high-density, commodity DRAM modules by repeatedly accessing uncached memory rows. Disturbance errors occur due to the charge coupling between DRAM cells, which accelerates charge leakage in adjacent rows, and eventually results in bits being flipped in so-called victim rows in DRAM, even though said victim rows were not explicitly accessed. The Rowhammer effect allows for breaking many software-based security mechanisms, as well as memory and process isolation, because it allows flipping memory bits, which would otherwise be protected by software-based access control mechanisms. Numerous papers have been published that use the Rowhammer effect in order to improve the identification of vulnerable DRAM cells or to implement various Rowhammer attacks [2]–[5].