An FEM based framework to simulate semiconductor devices using streamline upwind Petrov-Galerkin stabilization technique

In this paper, a Continuous Galerkin Finite Element Method has been used to build a suitable framework to numerically analyse semiconductor devices for various applications in electronics industry. Streamline upwind Petrov-Galerkin (SUPG) stabilization technique has been utilized to calculate the flux (flow of charge) in the device effectively. SUPG stabilization technique has been proved to be better than the classical Scharfetter-Gummel method to solve a advection-diffusion equation. We have implemented semi-classical Drift-Diffusion model to simulate semiconductor devices, incorporating different models for carrier generation-recombination and mobility. SUPG technique enables the use of coarse unstructured mesh to get accurate results which effectively reduces simulation time as well. Simulation results for a PN junction diode and MOSFET have been presented to validate effectiveness of the method.