Anomalous bias temperature instability on accumulation-mode Ge and III-V MOSFETs

In this work, we report the observation of anomalous bias temperature instability (ABTI) phenomenon on InGaAs accumulation-mode nMOSFET with Al
2
O
3
as dielectric and Ge accumulation-mode pMOSFET with Al
2
O
3
/GeO
2
gate stack. During NBTI measurement on Ge accumulation-mode pMOSFETs and PBTI measurement on InGaAs accumulation-mode nMOSFETs, threshold voltage shifts to the opposite direction comparing with classic NBTI and PBTI phenomenon. A simple model is proposed to explain the experimental observation. It is understood that trap neutral level alignment and donor-like and acceptor-like traps generation and recovery are the origins of the ABTI behavior.