High-temperature-resistant interconnection by using Nickel Nano-particles for power devices packaging

The improvement of interconnection technology is becoming a top priority for the operation of high power devices such as SiC at higher temperatures. We proposed a interconnection method using Nickel Nano-particles direct bonding to form bonds between the chip electrodes and substrates. SiC devices assembled with the Ni bonding interconnection were confirmed to be operated successfully in a high temperature environment over 300 °C.