Self-heating impact on TDDB in bulk FinFET devices: Uniform vs Non-uniform Stress

Self-heating is a growing concern for thin-body devices. In this paper, we discuss the impact of self-heating on TDDB using uniform and non-uniform gate dielectric stress. We show lifetime reduction with increasing drain voltages consistent with elevated temperature stress. It is also shown that the power law dependence to gate voltage is preserved at different drain voltages. Due to limited self-heating during nominal device operation TDDB lifetime is not reduced for CMOS circuits.