Sheet Resistance Dependence on Ion Angle Deviation

This paper will examine the influence of ion angle deviation (IAD) on sheet resistance. The IAD is derived from the beam intensity profile measured in the MC3-II/GP medium current implanter. IAD is controlled independently in the horizontal and vertical directions by tuning voltages in the Qlens. It was found that the sheet resistance (Rs) regularly increases with an increase of IAD at a tilt of 0° where strong channeling occurs, while the Rs is constant for various IADs at a tilt of 7°. These results suggest that the Rs at 0° is suitable for use as an IAD monitoring method and that the IAD can be flexibly controlled in the MC3-II/GP.