Conducted noise reduction on AC/DC converter using SiC-MOSFET

This paper describes the frequency analysis method of the conducted noise in AC/DC converter using SiC-MOSFET on the basis of the leakage current by switching. The error of the experimental and simulation result of the disturbance voltage is 10 dBμV. The simulation result can be closely simulated including resonance points. Furthermore, this paper presented verification results of designed EMI filters by performing the experiment. The disturbance voltage can be reduced by maximum 20dBμV with the common-mode filter. Moreover, the experimental result with the common-mode filter shows good agreement with the simulation result. Effectiveness is verified by several experimental and simulation results.