Optimized power modules for silicon carbide MOSFET

An Integrated Power Board technology was used to construct a 3D power module. This packaging is suitable for use of WBG devices as it reduces the inductive parasitics to the strict minimum, with a 2nH loop inductance in our 1.2kV/80A SiC prototype using SiC MOSFETs. The packaging presents virtually no parasitics or necessity for slowing down the commutation, which is oscillation-free. The conducted emissions of the 3D module are more than halved in comparison to those of a bespoke wire-bonded, EMI-optimised module.