Performance Investigation of Dual Trench Split-Control-Gate MOSFET as Hydrogen Gas Sensor: A Catalytic Metal Gate Approach

In this letter, dual trench split-control-gate MOSFET based hydrogen gas sensor considering catalytic palladium metal gate approach is simulated using SILVACO ATLAS TCAD. The inner gate architecture in addition to the outer control gates provides enhanced carrier control. Shifts in surface potential, subthreshold current, linear current, and threshold voltage are used to investigate the performance of the proposed gas sensor. The contribution of analog metrices like the transconductance and parasitic capacitances is explored thoroughly. Sensitivity as a function of subthreshold current as well as change in threshold voltage for the presence and absence of hydrogen gas molecules has been discussed. Results exhibit the superiority of the proposed gas sensor compared with the reported models in terms of sensitivity and I
_on
/I
_off
ratio and suitability for hydrogen gas detection.