Room Temperature Hydrogen Gas Sensing Using Zn2TiO4 Thin Film

Zn
₂
TiO
₄
thin film is formed on Si/SiO
₂
substrate by a spin coating process and Al is used as electrodes. This device has excellent hydrogen (H
₂
) gas sensing properties. The phase and crystal structure of the thin film was studied using X-ray diffraction. The sensor responds linearly at room temperature to H
₂
gas concentrations ranging from 50 to 250 ppm and shows a good sensitivity toward low ppm of H
₂
. The response time of the sensor is about 76 s at 250-ppm H
₂
. We could fit the sensor response to the Langmuir adsorption model.