Optimization of GaN-based ultra-low power boost converter in far-field energy harvesting

This paper presents a method of optimizing low power boost converters for use in far-field wireless energy harvesting systems. This method uses a database of manufacturer-provided device characteristics of both Silicon and GaN FETs to construct Figures of Merit (FOMs) used for evaluating device technologies for power loss based on boost converter parameters. A loss model is constructed for predicting device power losses and system efficiency over a wide range of operating points. Using the analysis framework, an asynchronous boost converter is constructed and experimentally verified with operation as low as 10 μW with a peak efficiency of 74% at an input power of 300 μW.