Extraction of Trench Capacitance and Reverse Recovery Time of InGaAs Self-Switching Diode

In this paper, we have presented the transient analysis of an InGaAs based novel nano diode called self-switching device utilizing Silvaco TCAD simulator. The device exhibits current-voltage (I-V) characteristics analogous to a conventional diode without requiring any p-n junction. The cut-in voltage and the output current of the device can be tuned by varying channel width and length, respectively. The charging/discharging time (RC time constants) have been extracted from the I-V characteristics of the device demonstrating almost very small reverse recovery time of the order of 10
^-9
s, which significantly affects the device on-off switching. Furthermore, results are validated by implementing the conformal mapping technique to extract device capacitance, which in turn predicts device charging and discharging, and hence, reverse recovery time to enable high frequency operation. Additionally, it is demonstrated that small reverse recovery time enables SSDs to rectify the input signal without requiring additional filter circuitry.