Low Power, Reliable, and Nonvolatile MSRAM Cell for Facilitating Power Gating and Nonvolatile Dynamically Reconfiguration

This paper proposes a new magnetic random access memory (MRAM)-backed SRAM (MSRAM) cell to be used in structure of programmable logic devices such as field programmable gate array (FPGA). The proposed cell contains a fast SRAM part and also a backup MRAM part. An FPGA based on the proposed MSRAM cell will offer good performance, very low power consumption, and also nonvolatility. Besides, by increasing the number of MRAM parts, it can offer the capability of multiple design implementations. Furthermore, facilitating power gating and tolerance to radiation-induced soft errors are of other advantages offered by the proposed design.