Sensitivity Analysis of I-Shape TFET Biosensor Considering Repulsive Steric and Trap Effects

In this work, a dielectric modulated (DM) I-shape Tunnel FET based label-free biosensor has been explored on considering both the repulsive steric effect (RSE) and trap effect in the TCAD simulator. The gate oxide layer is aligned over the N
⁺
pocket on both side source regions to enhance the tunneling rate. Moreover, the impact of trap impurities and steric effects are reported by extracting the drain current (I
_D
), energy band diagram, surface potential (ψ), current ratio, and drain current sensitivity (S
_ION
) for the variation in length of cavity (L
_C
), thickness of cavity (T
_C
), and supply voltage (V
_DS
). Furthermore, the noise assessment parameter has been explored on considering of same non-idealistic effects. It is seen that on considering RSE and trap impurities, the streptavidin biomolecules report an error in sensitivity (60.1%)
_NoTrap
and (108.6%)
_Trap
.