Microcantilever Printed CuO Single Nanowire Field-Effect Transistors for Sensing Applications

This work reports the synthesis of copper oxide (CuO) nanowires (NWs) using thermal oxidation followed by microcantilever contact print (
$\mu$
CCP) of silver nanoparticles (AgNP) on Si-SiO
$_{2}$
substrate to get field-effect transistors (FETs) in back, coplanar, and top gate configurations. CuO single NWs (SNWs) FETs with channel lengths 10–50
$\mu$
m, and diameter 200–250 nm are fabricated and characterized to understand the transport properties of SNW devices. The fabricated FETs exhibit p-type conduction with hole mobility 0.14–0.36 cm
$^{2}$
V
$^{-1}$
s
$^{-1}$
and the hole concentration in dark and photo-excitation found to be in the range of 10
$^{16}$
–10
$^{17}$
cm
$^{-3}$
and 10
$^{17}$
–10
$^{19}$
cm
$^{-3}$
, respectively. The developed CuO SNW two-terminal and FETs are used to detect the white light at room temperature and ethanol at 150
$^{\circ }$
C. The FETs have limited performance but are stable for months.