Effect of a ZnS intermediate layer on properties of Cu2ZnSnS4 films from sputtered Zn/CuSn precursors on Si (100) substrate

A 10nm ZnS thin film was employed between Si substrate and Cu
₂
ZnSnS
₄
(CZTS) layer prepared by sulfurizing the sputtered metallic stacking layers. The properties of as-prepared CZTS films with and without a ZnS intermediate layer were compared to investigate the effect of ZnS layer. The introduction of this ZnS layer dramatically reduced the void density between CZTS and Si substrate, and enhanced the photoluminescence yield of CZTS films.