On-Wafer Capacitance Measurement of Nb-Based SIS Junctions With a 4-K Probe Station

This paper presents a method for measuring the capacitance of superconductor-insulator-superconductor (SIS) junctions with a 4-K probe station. The probe station can be used to perform on-wafer characterization of sample lots at frequencies ranging from dc to microwave. In our study, we evaluated SIS junctions that had a variety of areas, and estimated the capacitance after subtracting the parasitic elements of the probe contact pad. The results show that the RNC products for the evaluated junctions were uniform within +/-5% across the wafer.