Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading

Power GaN HEMT components offer very interesting performances (high voltage, high current, low on-resistance, fast switching), but the GaN material has some “defects” that can lead to carrier trapping, which induces dynamic electrical phenomena. Thereby, static measurement of the GaN HEMT components requires some reconsideration. In this work, we analyze how the typical static electrical parameters evolve as a function of time and how much they deviate from the DC measurements.