TCAD simulation of germanium source dopingless tunnel FET

In this paper, we investigated two dimensional simulation study of a germanium source doping-less tunnel field effect transistor (TFET). Use of low band gap material such as germanium is an effective way to increase tunneling. By using germanium at only source side off current increases less in compare to whole germanium device. By presenting the comparative study of conventional doping-less TFET and germanium source doping-less TFET we demonstrated that germanium source doping-less TFET have much better on current. Dopingless devices uses low thermal budget for fabrication so germanium source dopingless TFET's are suitable candidate for lowP power low cost devices.