InGaAs nanowire MOSFETs with ION = 555 µA/µm at IOFF = 100 nA/µm and VDD = 0.5 V

We report on In
0.85
Ga
0.15
As nanowire MOSFETs (NWFETs) with record performance in several key VLSI metrics. These devices exhibit I
ON
= 555 µA/µm (at I
OFF
= 100 nA/µm and V
DD
= 0.5 V), I
ON
= 365 µA/µm (at I
OFF
= 10 nA/µm and V
DD
= 0.5 V) and a quality factor Q = g
m
/SS of 40, all of which are the highest reported for a III–V as well as silicon transistor. Furthermore, a highly scalable, self-aligned gate-last fabrication process is utilized, with a single nanowire as the channel. The devices use a 45° angle between the nanowire and the contacts, which allows for up to a 1.4 times longer gate length at a given pitch.