Evaluation of GaN HEMTs for high-voltage stage of isolated DC-DC converters

This paper presents an experimental study of the half-bridge based on high voltage enhancement mode GaN high electron mobility transistors (HEMTs). It was tested with pure inductive load at various switching frequencies and power levels to verify gate driver and cooling system. All tests performed confirm excellent performance of the 650 V GaN HEMTs and the developed half-bridge stage may be applied in future design of the fully controlled DC-DC converter for PV applications.